CAOSP abstracts, Volume: 23, year: 1993

Abstract: The role of Si II autoionization lines around the lambda 520 nm depression is investigated using the curve of growth approach. While absorption of the Fe II ion decreases with increasing temperature, the absorption of the Si ion increases. However, absorption of the singly ionized Fe is still dominant in the depression. This is confirmed by consistent computations of synthetic spectra. The effect of atmosphere stratification in optical depths of silicon does not enhance the absorption in lambda 520 nm dominantly.

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